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RTAX250-SCG624EV Datasheet(PDF) 6 Page - Actel Corporation |
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RTAX250-SCG624EV Datasheet(HTML) 6 Page - Actel Corporation |
6 / 170 page RTAX-S/SL RadTolerant FPGAs vi v5.3 Actel "EV" Flow (Class V Flow Equivalent Processing) Table 4 • Actel "EV" Flow (Class V Equivalent Flow Processing) for RTAX-S/SL1, 2, 3 Step Screen Method Requirement 1 Destructive Bond Pull4 2011, Condition D Extended Sample 2 Internal Visual 2010, Condition A 100% 3 Serialization 100% 4 Temperature Cycling 1010, Condition C, 50 cycles minimum 100% 5 Constant Acceleration 2001, Y1 Orientation Only Condition B for CQ352, LG624, LG1152 Condition D for CQ208 TBD for LG1272 100% 6 Particle Impact Noise Detection 2020, Condition A 100% 7 Radiographic (X-Ray) 2012, One View (Y1 Orientation) Only 100% 8 Pre-Burn-In Electrical Parameters In accordance with applicable Actel device specification 100% 9 Dynamic Burn-In 1015, Condition D, 240 hours at 125°C or 120 hours at 150°C minimum 100% 10 Interim (Post-Dynamic-Burn-In) Electrical Parameters In accordance with applicable Actel device specification 100% 11 Static Burn-In 1015, Condition C, 72 hours at 150°C or 144 hours at 125°C minimum 100% 12 Interim (Post-Static-Burn-In) Electrical Parameters In accordance with applicable Actel device specification 100% 13 Percent Defective Allowable (PDA) Calculation 5% Overall, 3% Functional Parameters at 25°C All Lots 14 Final Electrical Test3 a. Static Tests (1) 25°C (2) –55°C and +125°C b. Functional Tests (1) 25°C (2) –55°C and +125°C c. Switching Tests at 25°C In accordance with applicable Actel device specification, which includes a, b, and c: 5005, Table 1, Subgroup 1 5005, Table 1, Subgroup 2, 3 5005, Table 1, Subgroup 7 5005, Table 1, Subgroup 8a, 8b 5005, Table 1, Subgroup 9 100% 15 Seal (Fine & Gross Leak Test) 1014 100% 16 External Visual 2009 100% 17 Wafer Lot Specific Life Test (Group C) MIL-PRF-38535, Appendix B, sec. B.4.2.c All Wafer Lots Notes: 1. Actel offers "EV" flow for users requiring full compliance to MIL-PRF-38535 class V requirement. The "EV" process flow is expanded from the existing E-flow requirement (it still meets the full SMD requirement for current E-flow devices) with the intention to be in full compliance to MIL-PRF-38535 Table IA and Appendix B requirement, but without the official class V certification from DSCC. 2. For CCGA devices, all Assembly/Screening/TCI testing are performed at LGA level. Only QA electrical and mechanical visual are performed after solder column attachment. 3. RTAX-S and RTAX-SL devices have the same silicon and are distinguished by screening the ICCA current limits at 125°C final electrical test. 4. Requirement for 100% nondestructive bond pull per Method 2003 is substituted by an extensive destructive bond pull to Method 2011 Condition D on an extended sample basis. |
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