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MJE5170 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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MJE5170 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors MJE5170/5171/5172 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT MJE5170 -120 MJE5171 -140 VCEO(SUS) Collector-Emitter Sustaining Voltage MJE5172 IC= -30mA ;IB= 0 B -160 V VCE(sat) Collector-Emitter Saturation Voltage IC= -6A; IB= -0.6A B -1.5 V VBE(on) Base-Emitter On Voltage IC= -6A; VCE= -4V -2.0 V MJE5170 VCE= -60V; IB= 0 B -0.7 MJE5171 VCE= -70V; IB= 0 B -0.7 ICEO Collector Cutoff Current MJE5172 VCE= -80V; IB= 0 B -0.7 mA MJE5170 VCE= -120V;VEB= 0 -0.4 MJE5171 VCE= -140V;VEB= 0 -0.4 ICES Collector Cutoff Current MJE5172 VCE= -160V;VEB= 0 -0.4 mA IEBO Emitter Cutoff Current VEB= -5V; IC=0 -1.0 mA hFE-1 DC Current Gain IC= -0.3A; VCE= -4V 30 hFE-2 DC Current Gain IC= -3A; VCE= -4V 15 100 fT Current-Gain—Bandwidth Product IC= -0.5A ;VCE= -10V;ftest= 1.0MHz 1.0 MHz isc Website:www.iscsemi.cn 2 |
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