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BYG10M Datasheet(PDF) 1 Page - Vishay Siliconix |
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BYG10M Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 5 page BYG10 Vishay Telefunken www.vishay.de • FaxBack +1-408-970-5600 Rev. 3, 24-Jun-98 1 (5) Document Number 86008 Silicon Mesa SMD Rectifier Features D Controlled avalanche characteristics D Glass passivated junction D Low reverse current D High surge current capability D Wave and reflow solderable Applications Surface mounting General purpose rectifier 15 811 Absolute Maximum Ratings Tj = 25_C Parameter Test Conditions Type Symbol Value Unit Reverse voltage BYG10D VR=VRRM 200 V g =Repetitive peak reverse voltage BYG10G VR=VRRM 400 V BYG10J VR=VRRM 600 V BYG10K VR=VRRM 800 V BYG10M VR=VRRM 1000 V Peak forward surge current tp=10ms, half sinewave IFSM 30 A Average forward current IFAV 1.5 A Junction and storage temperature range Tj=Tstg –55...+150 °C Pulse energy in avalanche mode, non repetitive (inductive load switch off) I(BR)R=1A, Tj=25°C ER 20 mJ Maximum Thermal Resistance Tj = 25_C Parameter Test Conditions Symbol Value Unit Junction lead TL=const. RthJL 25 K/W Junction ambient mounted on epoxy–glass hard tissue RthJA 150 K/W mounted on epoxy–glass hard tissue, 50mm2 35 mm Cu RthJA 125 K/W mounted on Al–oxid–ceramic (Al2O3), 50mm2 35mm Cu RthJA 100 K/W |
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