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2N3740 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2N3740 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page 固电半导体 INCHANGE SEMICONDUCTOR Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N3740 2N3741 DESCRIPTION ・With TO-66 package ・Excellent safe area limits ・Low collector saturation voltage APPLICATIONS ・Suitable for use in as drivers,switches and medium-power amplifier and applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2N3740 -60 VCBO Collector-base voltage 2N3741 Open emitter -80 V 2N3740 -60 VCEO Collector-emitter voltage 2N3741 Open base -80 V VEBO Emitter-base voltage Open collector -7 V IC Collector current -4 A ICM Collector current-Peak -10 A IB Base current -2 mA PT Total power dissipation TC=25℃ 25 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-C Thermal resistance from junction to case 7.0 ℃/W Fig.1 simplified outline (TO-66) and symbol |
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