BZM55C2V4 datasheet(1/6 Pages) VISHAY

Part #	BZM55C2V4

Description	Silicon Epitaxial Planar Z-Diodes

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Manufacturer	VISHAY [Vishay Siliconix]

Direct Link	http://www.vishay.com

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BZM55C...

Vishay Telefunken

Rev. 3, 01-Apr-99

1 (6)

www.vishay.de

• FaxBack +1-408-970-5600

Document Number 85598

Silicon Epitaxial Planar Z–Diodes

Features

D Saving space

D Hermetic sealed parts

D Fits onto SOD 323 / SOT 23 footprints

D Electrical data identical with the devices

BZT55C... / TZMC...

D Very sharp reverse characteristic

D Low reverse current level

D Very high stability

D Low noise

D Available with tighter tolerances

Applications

Voltage stabilization

96 12315

Absolute Maximum Ratings

Tj = 25_C

Parameter

Test Conditions

Type

Symbol

Value

Unit

Power dissipation

RthJAx300K/W

PV

500

mW

Z–current

IZ

PV/VZ

mA

Junction temperature

Tj

175

°C

Storage temperature range

Tstg

–65...+175

°C

Maximum Thermal Resistance

Tj = 25_C

Parameter

Test Conditions

Symbol

Value

Unit

Junction ambient

mounted on epoxy–glass hard tissue, Fig. 1

RthJA

500

K/W

Junction tie point

35

mm copper clad, 0.9 mm2 copper area per electrode

RthJL

300

K/W

Electrical Characteristics

Tj = 25_C

Parameter

Test Conditions

Type

Symbol

Min

Typ

Max

Unit

Forward voltage

IF=200mA

VF

1.5

V

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