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LND823 Datasheet(PDF) 4 Page - Linear Dimensions Semiconductor |
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LND823 Datasheet(HTML) 4 Page - Linear Dimensions Semiconductor |
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4 / 4 page  Symbol Parameter Conditions Min Typ Max Units IS Continuous Source Current -- 2.5 ISM Pulsed Source Current (Body Diode) (1) MOSFET symbol showing the integral reverse p-n junction diode -- 8.0 A VSD Diode Forward Voltage TJ=25 °C, IS=2.5A, VGS=0V(4) -- 1.6 V trr Reverse Recovery Time TJ=25 °C, IF=2.1A, di/dt=100A/ µs (4) - - 520 nS Qrr Reverse Recovery Charge - 0.70 1.4 µC tON Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes : 1 : Repetitvie rating :pulse width limited by max. junction temperature 2 : VDD=50V, starting TJ =25 °C,L=60mH RG=25Ω, IAS =2.5A 3 : ISD ≤ 2.5A, di/dt≤50 A/µs, VDD ≤ V(BR)DSS ,TJ≤150°C 4 : Pulse width ≤ 300µs; duty cycle≤ 2% LND820/821/822/823 SOURCE-DRAIN RATING AND CHARACTERISTICS • Linear Dimensions, Inc. • 445 East Ohio Street, Chicago IL 60611 USA • tel 312.321.1810 • fax 312.321.1830 • www.lineardimensions.com • |
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Similar Description - LND823 |
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