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2N3715 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2N3715 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Website:www.iscsemi.cn 2 isc Silicon NPN Power Transistors 2N3715/3716 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2N3715 60 VCEO(SUS) Collector-Emitter Sustaining Voltage 2N3716 IC= 200mA ; IB= 0 80 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A 0.8 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A 1.5 V VBE(on) Base-Emitter On Voltage IC= 3A ; VCE= 2V 1.5 V 2N3715 VCE= 80V; VBE(off)= -1.5V VCE= 60V; VBE(off)= -1.5V, TC=150℃ 1.0 10 ICEX Collector Cutoff Current 2N3716 VCE= 100V; VBE(off)= -1.5V VCE= 80V; VBE(off)= -1.5V, TC=150℃ 1.0 10 mA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 5.0 mA hFE-1 DC Current Gain IC= 1A ; VCE= 2V 50 150 hFE-2 DC Current Gain IC= 3A ; VCE= 2V 30 fT Current-Gain —Bandwidth Product IC= 0.5A ; VCE= 10V ;ftest= 1.0MHz 4 MHz Switching Times tr Rise Time 0.45 μs tstg Storage Time 0.3 μs tf Fall Time IC= 5A; IB1= -IB2= 0.5A 0.4 μs |
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