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2N3716 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2N3716 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc Product Specification isc Website:www.iscsemi.cn isc Silicon NPN Power Transistors 2N3715/3716 DESCRIPTION ·DC Current Gain- : hFE= 50-150@IC= 1A ·Wide Area of Safe Operation ·Low Collector Saturation Voltage- : VCE(sat)= 0.8V(Max.)@ IC= 5A ·Complement to Type 2N3791/3792 APPLICATIONS ·Designed for medium-speed switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.17 ℃/W SYMBOL PARAMETER VALUE UNIT 2N3715 80 VCBO Collector-Base Voltage 2N3716 100 V 2N3715 60 VCEO Collector-Emitter Voltage 2N3716 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A IB Base Current 4 A PC Collector Power Dissipation@TC=25℃ 150 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ |
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