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BZG03C56 Datasheet(PDF) 1 Page - Vishay Siliconix |
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BZG03C56 Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 5 page BZG03C... Vishay Telefunken Rev. 5, 01-Apr-99 1 (5) www.vishay.de • FaxBack +1-408-970-5600 Document Number 85593 Silicon Z–Diodes Features D Glass passivated junction D High reliability D Voltage range 10V to 270V D Fits onto 5 mm SMD footpads D Wave and reflow solderable Applications Voltage stabilization 15 811 Absolute Maximum Ratings Tj = 25_C Parameter Test Conditions Type Symbol Value Unit Power dissipation RthJA<25K/W, Tamb=100°C PV 3 W RthJA<100K/W, Tamb=50°C PV 1.25 W Non repetitive peak surge power dissipation tp=100ms sq.pulse, Tj=25°C prior to surge PZSM 600 W Junction temperature Tj 175 °C Storage temperature range Tstg –65...+150 °C Maximum Thermal Resistance Tj = 25_C Parameter Test Conditions Symbol Value Unit Junction lead RthJL 25 K/W Junction ambient mounted on epoxy–glass hard tissue, Fig. 1a RthJA 150 K/W mounted on epoxy–glass hard tissue, Fig. 1b RthJA 125 K/W mounted on Al–oxid–ceramic (Al2O3), Fig. 1b RthJA 100 K/W Electrical Characteristics Tj = 25_C Parameter Test Conditions Type Symbol Min Typ Max Unit Forward voltage IF=0.5A VF 1.2 V |
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