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9N60 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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9N60 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Website:www.iscsemi.cn isc N-Channel Mosfet Transistor 9N60 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA 600 V VGS(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA 2 4 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 5A 1.0 Ω IGSS Gate-Body Leakage Current VGS= ±20V; VDS= 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS= 600V; VGS= 0 1 μA VSD Forward On-Voltage IS= 8.5A; VGS= 0 1.7 V · |
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