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Document Number 83606

Rev. 1.5, 26-Oct-04

CNY17

Vishay Semiconductors

Absolute Maximum Ratings

Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is

not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute

Maximum Rating for extended periods of the time can adversely affect reliability.

Input

Output

Coupler

Parameter

Test condition

Symbol

Value

Unit

Reverse voltage

6.0

V

Forward current

60

mA

Surge current

t

≤ 10 µs

2.5

A

Power dissipation

100

mW

Parameter

Test condition

Symbol

Value

Unit

Collector-emitter breakdown

voltage

70

V

Emitter-base breakdown

voltage

7.0

V

Collector current

50

mA

t < 1.0 ms

100

mA

Power dissipation

150

mW

Parameter

Test condition

Symbol

Value

Unit

Isolation test voltage (between

emitter & detector referred to

climate DIN 50014,

part 2, Nov. 74)

t = 1 sec

5300

Creepage distance

≥ 7.0

mm

Clearance distance

≥ 7.0

mm

Isolation thickness between

emitter and detector

≥ 0.4

mm

Comparative tracking index per

DIN IEC 112/VDE0303, part 1

175

Isolation resistance

Ω

Ω

Storage temperature

- 55 to + 150

°C

Operating temperature

- 55 to + 100

°C

Soldering temperature

max. 10 s, dip soldering:

distance to seating plane

≥ 1.5 mm

260

°C