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CNY17-3X006 Datasheet(PDF) 3 Page - Vishay Siliconix |
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CNY17-3X006 Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 10 page CNY17 Document Number 83606 Rev. 1.5, 26-Oct-04 Vishay Semiconductors www.vishay.com 3 Electrical Characteristics Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Output Coupler Current Transfer Ratio Current Transfer Ratio and collector-emitter leakage current by dash number (Tamb°C) Parameter Test condition Symbol Min Typ. Max Unit Forward voltage IF = 60 mA VF 1.25 1.65 V Breakdown voltage IR = 10 mA VBR 6.0 V Reserve current VR = 6.0 V IR 0.01 10 µA Capacitance VR = 0 V, f = 1.0 MHz CO 25 pF Thermal resistance Rth 750 K/W Parameter Test condition Symbol Min Typ. Max Unit Collector-emitter capacitance VCE = 5.0 V, f = 1.0 MHz CCE 5.2 pF Collector - base capacitance VCB = 5.0 V, f = 1.0 MHz CCB 6.5 pF Emitter - base capacitance VEB = 5.0 V, f = 1.0 MHz CEB 7.5 pF Thermal resistance Rth 500 K/W Parameter Test condition Part Symbol Min Typ. Max Unit Collector-emitter saturation voltage VF = 10 mA, IC = 2.5 mA VCEsat 0.25 0.4 V Coupling capacitance CC 0.6 pF Collector-emitter leakage current VCE = 10 V, ICEO CNY17-1 ICEO 2.0 50 nA CNY17-2 ICEO 2.0 50 nA CNY17-3 ICEO 5.0 100 nA CNY17-4 ICEO 5.0 100 nA Parameter Test condition Part Symbol Min Typ. Max Unit IC/IF IF = 10 mA, VCE = 5.0 V CNY17-1 CTR 40 80 % CNY17-2 CTR 63 125 % CNY17-3 CTR 100 200 % CNY17-4 CTR 160 320 % IF = 1.0 mA, VCE = 5.0 V CNY17-1 CTR 13 30 % CNY17-2 CTR 22 45 % CNY17-3 CTR 34 70 % CNY17-4 CTR 56 90 % |
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