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LL4448-GS18 Datasheet(PDF) 2 Page - Vishay Siliconix |
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LL4448-GS18 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 5 page www.vishay.com 2 Document Number 85557 Rev. 1.8, 24-Mar-06 LL4148 / LL4448 Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Typical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Part Symbol Min Typ. Max Unit Forward voltage IF = 5 mA LL4448 VF 620 720 mV IF = 50 mA LL4148 VF 860 1000 mV IF = 100 mA LL4448 VF 930 1000 mV Reverse current VR = 20 V IR 25 nA VR = 20 V, Tj = 150 °C IR 50 µA VR = 75 V IR 5µA Breakdown voltage IR = 100 µA, tp/T = 0.01, tp = 0.3 ms V(BR) 100 V Diode capacitance VR = 0, f = 1 MHz, VHF = 50 mV CD 4pF Rectification efficiency VHF = 2 V, f = 100 MHz η r 45 % Reverse recovery time IF = IR = 10 mA, iR = 1 mA trr 8ns IF = 10 mA, VR = 6 V, iR = 0.1 x IR, RL = 100 Ω trr 4ns Figure 1. Forward Current vs. Forward Voltage 0 0.4 0.8 1.2 1.6 0.1 1 10 100 1000 VF - Forward Voltage (V) 2.0 94 9096 LL4148 Scattering Limit Tj = 25 °C Figure 2. Forward Current vs. Forward Voltage 94 9097 Tj =25 °C LL4448 Scattering Limit 0 0.4 0.8 1.2 1.6 0.1 1 10 100 1000 VF - Forward Voltage (V) 2.0 |
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