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2SB1562 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SB1562 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB1562 DESCRIPTION ·High DC Current Gain- : hFE= 300~1000@ (VCE= -5V , IC= -0.5A) ·Low Saturation Voltage- : VCE(sat)= -0.5V(TYP.)@ (IC= -2A, IB= -20mA) B APPLICATIONS ·Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -3 A ICM Collector Current-Pulse -6 A IB B Base Current-Continuous -0.6 A Collector Power Dissipation @TC=25℃ 25 PC Collector Power Dissipation @Ta=25℃ 2 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc Website:www.iscsemi.cn |
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