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SPA-1426Z Datasheet(PDF) 1 Page - RF Micro Devices

Part # SPA-1426Z
Description  0.7GHz to 2.2GHz 1W InGaP HBT AMPLIFIER
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Manufacturer  RFMD [RF Micro Devices]
Direct Link  http://www.rfmd.com
Logo RFMD - RF Micro Devices

SPA-1426Z Datasheet(HTML) 1 Page - RF Micro Devices

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Features
1 of 14
Optimum Technology
Matching® Applied
GaAs HBT
InGaP HBT
GaAs MESFET
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
RF MEMS
SPA-1426Z
0.7GHz to 2.2GHz 1W InGaP HBT AMPLIFIER
RFMD’s SPA-1426Z is a high linearity single-stage class A Heterojunction Bipolar
Transistor (HBT) power amplifier. The SPA-1426Z is made with InGaP-on-GaAs
device technology and fabricated with MOCVD for an ideal combination of low cost
and high reliability. It is well suited for use as a driver stage in macro/micro-cell
infrastructure equipment, or as the final output stage in pico-cell infrastructure
equipment. It features an input power detector, on/off power control, ESD protec-
tion, excellent overall robustness and a hand reworkable and thermally enhanced
SOF-26 package.
ACP versus Channel Power, 2140MHz, W-CDMA
-75.0
-70.0
-65.0
-60.0
-55.0
-50.0
-45.0
-40.0
-35.0
8.0
10.0
12.0
14.0
16.0
18.0
20.0
22.0
Channel Power Out (dBm)
-40°C
25°C
85°C
P1dB=29.5dBm @ 2140MHz
ACP = -65dBc with 17.0dBm
Channel Power @ 2140MHz
Low Thermal Resistance
Package
Power Up/Down Control<1
μs
Robust Class 1C ESD
Applications
Macro/Micro-Cell Driver
Stage
Pico-Cell Output Stage
GSM, CDMA, TDSCDMA,
WCDMA, IS-95
Single and Multi-Carrier Appli-
cations
EDS-105883 Rev B
Preliminary
RoHS Compliant and Pb-Free Product
Package: SOF-26
SPA-1426Z
0.7GHz to
2.2GHz 1W
InGaP HBT
Amplifier
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Small Signal Gain
16.5
dB
885MHz
14.0
dB
1960MHz
14.0
dB
2140MHz
Output Power at 1dB Compression
29.5
dBm
885MHz
28.5
dBm
1960MHz
29.5
dBm
2140MHz
Output Third Order Intercept Point, 18dBm per
tone, 1MHz spacing
43.0
dBm
885MHz
47.0
dBm
1960MHz
46.5
dBm
2140MHz
W-CDMA Channel Power
3GPP 3.5, test model 1, 64 DPCH
-65dBc ACP
14.2
dBm
885MHz
-55dBc ACP
18.4
dBm
885MHz
-65dBc ACP
16.5
dBm
1960MHz
-55dBc ACP
18.5
dBm
1960MHz
-65dBc ACP
17.0
dBm
2140MHz
-55dBc ACP
19.0
dBm
2140MHz
Input Return Loss
15.0
18.0
dB
1960MHz
Output Return Loss
8.0
10.5
dB
1960MHz
Noise Figure
5.4
dB
1960MHz
Operating Current (VCC=5V), Quiescent
325.0
mA
Operating Voltage
5.0
5.5
V
Power Up Control Current (VPC=5V)
2.1
mA
VCC Leakage Current (VCC=5V, VPC=0V)
100.0
μA
Thermal Resistance (junction to lead)
21
°C/W
Test Conditions: VCC=5V ICQ=325mA Typ. TL=25°C ZS=ZL=50Ω


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