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AO4430 Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors |
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AO4430 Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors |
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2 / 5 page  AO4430 Symbol Min Typ Max Units BVDSS 30 V 1 TJ=55°C 5 IGSS 100 nA VGS(th) 1 1.8 2.5 V ID(ON) 80 A 4.7 5.5 TJ=125°C 6.5 8 6.2 7.5 m Ω gFS 82 S VSD 0.7 1 V IS 4.5 A Ciss 4660 6060 7270 pF Coss 425 638 960 pF Crss 240 355 530 pF Rg 0.2 0.45 0.9 Ω Qg(10V) 80 103 124 nC Qg(4.5V) 37 48 58 nC Qgs 18 nC Qgd 15 nC tD(on) 12 16 ns tr 8 12 ns tD(off) 51.5 70 ns tf 8.8 14 ns trr 33.5 44 ns Qrr 22 30 nC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=18A, dI/dt=100A/µs Drain-Source Breakdown Voltage On state drain current ID=250µA, VGS=0V VGS=4.5V, VDS=5V VGS=10V, ID=18A Reverse Transfer Capacitance IF=18A, dI/dt=100A/µs Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions IDSS µA Gate Threshold Voltage VDS=VGS ID=250µA VDS=30V, VGS=0V VDS=0V, VGS= ±20V Zero Gate Voltage Drain Current Gate-Body leakage current RDS(ON) Static Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Maximum Body-Diode Continuous Current Input Capacitance Output Capacitance DYNAMIC PARAMETERS m Ω VGS=4.5V, ID=15A IS=1A,VGS=0V VDS=5V, ID=18A Turn-On Rise Time Turn-Off DelayTime VGS=10V, VDS=15V, RL=0.83Ω, RGEN=3Ω Turn-Off Fall Time Turn-On DelayTime Gate Drain Charge VGS=0V, VDS=15V, f=1MHz SWITCHING PARAMETERS Total Gate Charge Gate Source Charge Gate resistance VGS=0V, VDS=0V, f=1MHz Total Gate Charge VGS=10V, VDS=15V, ID=18A A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. Rev5: Nov 2008 Alpha & Omega Semiconductor, Ltd. www.aosmd.com |
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