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AO4490 Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors

Part # AO4490
Description  N-Channel Enhancement Mode Field Effect Transistor
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Manufacturer  AOSMD [Alpha & Omega Semiconductors]
Direct Link  http://www.aosmd.com
Logo AOSMD - Alpha & Omega Semiconductors

AO4490 Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors

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background image
AO4490
Symbol
Min
Typ
Max
Units
BVDSS
30
V
1
TJ=55°C
5
IGSS
10
µA
VGS(th)
1.4
1.8
2.5
V
ID(ON)
120
A
6
7.2
TJ=125°C
8.5
10
810
m
gFS
55
S
VSD
0.70
1.0
V
IS
4A
Ciss
1803
2170
pF
Coss
387
pF
Crss
238
pF
Rg
1.3
2
Qg(10V)
36
48
nC
Qg(4.5V)
19
nC
Qgs
3.9
nC
Qgd
8.7
nC
tD(on)
7.6
ns
tr
6.4
ns
tD(off)
27
ns
tf
8.5
ns
trr
27
33
ns
Qrr
17
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=16A, dI/dt=100A/µs
Drain-Source Breakdown Voltage
On state drain current
ID=250µA, VGS=0V
VGS=10V, VDS=5V
VGS=10V, ID=16A
Reverse Transfer Capacitance
IF=16A, dI/dt=100A/µs
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
IDSS
µA
Gate Threshold Voltage
VDS=VGS ID=250µA
VDS=30V, VGS=0V
VDS=0V, VGS= ±16V
Zero Gate Voltage Drain Current
Gate-Body leakage current
RDS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
DYNAMIC PARAMETERS
m
VGS=4.5V, ID=12A
IS=1A,VGS=0V
VDS=5V, ID=16A
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=15V, RL=1Ω,
RGEN=3Ω
Turn-Off Fall Time
Turn-On DelayTime
Gate Drain Charge
VGS=0V, VDS=15V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
Gate Source Charge
Gate resistance
VGS=0V, VDS=0V, f=1MHz
Total Gate Charge
VGS=10V, VDS=15V, ID=16A
A: The value of R θJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with
T A=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300
µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t≤ 10s thermal resistance rating.
G. EAR and IAR ratings are based on low frequency and duty cycles such that Tj(start)=25C for each pulse.
Rev2: Feb 2008
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com


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