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AOD454A Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors |
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AOD454A Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors |
2 / 6 page AOD454A Symbol Min Typ Max Units BVDSS 40 V 1 TJ=55°C 5 IGSS ±100 nA VGS(th) 1.7 2.5 3 V ID(ON) 40 A 24 30 TJ=125°C 37 46 30 40 gFS 25 S VSD 0.76 1 V IS 2.5 A Ciss 516 650 pF Coss 82 pF Crss 43 pF Rg 4.6 Ω Qg 8.3 10.8 nC Qgs 2.3 nC Qgd 1.6 nC tD(on) 6.4 ns tr 3.6 ns tD(off) 16.2 ns tf 6.6 ns trr 18 24 ns Qrr 10 nC COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Drain-Source Breakdown Voltage On state drain current ID=250µA, VGS=0V VGS=10V, VDS=5V VDS=40V, VGS=0V VDS=0V, VGS= ±20V Zero Gate Voltage Drain Current Gate-Body leakage current IDSS µA Body Diode Reverse Recovery Charge IF=12A, dI/dt=100A/µs Body Diode Reverse Recovery Time VGS=10V, ID=12A Reverse Transfer Capacitance IF=12A, dI/dt=100A/µs Gate Threshold Voltage VDS=VGS ID=250µA Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions RDS(ON) Static Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Maximum Body-Diode Continuous Current Input Capacitance Output Capacitance DYNAMIC PARAMETERS VGS=4.5V, ID=8A IS=1A,VGS=0V VDS=5V, ID=12A mΩ Turn-On Rise Time Turn-Off DelayTime VGS=10V, VDS=20V, RL=1.6Ω, RGEN=3Ω Turn-Off Fall Time Turn-On DelayTime Gate Drain Charge VGS=0V, VDS=20V, f=1MHz SWITCHING PARAMETERS Total Gate Charge TBD Gate Source Charge Gate resistance VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=20V, ID=12A TBD A: The value of RθJA is measured with the device in a still air environment with T A =25°C. The power dissipation PDSM and current rating IDSM are based on TJ(MAX)=150°C, using t ≤ 10s junction-to-ambient thermal resistance. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. H. The maximum current rating is limited by bond-wires. *This device is guaranteed green after data code 8X11 (Sep 1 ST 2008). Rev2: Oct 2008 Alpha & Omega Semiconductor, Ltd. www.aosmd.com |
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