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AOP611L Datasheet(PDF) 5 Page - Alpha & Omega Semiconductors |
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AOP611L Datasheet(HTML) 5 Page - Alpha & Omega Semiconductors |
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5 / 7 page  AOP611 Symbol Min Typ Max Units BVDSS -40 V -1 TJ=55°C -5 IGSS ±150 µA VGS(th) -1 -2 -3 V ID(ON) -25 A 43 52 TJ=125°C 60 72 65 80 m Ω gFS 11 S VSD -0.76 -1 V IS -3.5 A Ciss 1006 pF Coss 152 pF Crss 77 pF Rg 11 16.5 Ω Qg(10V) 17.4 nC Qg(4.5V) 8.8 nC Qgs 3.3 nC Qgd 4.5 nC tD(on) 9.7 ns tr 6.3 ns tD(off) 35.5 ns tf 26 ns trr 22 ns Qrr 15.9 nC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Body Diode Reverse Recovery Time IF=-5.5A, dI/dt=100A/µs Body Diode Reverse Recovery Charge IF=-5.5A, dI/dt=100A/µs Turn-On DelayTime VGS=-10V, VDS=-20V, RL=3.6Ω, RGEN=3Ω Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Total Gate Charge (4.5V) Gate Source Charge Gate Drain Charge SWITCHING PARAMETERS Total Gate Charge (10V) VGS=-10V, VDS=-20V, ID=-5.5A Reverse Transfer Capacitance Gate resistance DYNAMIC PARAMETERS Input Capacitance VGS=0V, VDS=-20V, f=1MHz VGS=0V, VDS=0V, f=1MHz Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current Output Capacitance VDS=-5V, ID=-5.5A RDS(ON) Static Drain-Source On-Resistance Forward Transconductance VGS=-10V, ID=-5.5A m Ω VGS=-4.5V, ID=-4.4A Gate Threshold Voltage VDS=VGS ID=-250µA On state drain current VGS=-10V, VDS=-5V µA Gate-Body leakage current VDS=0V, VGS=±20V Drain-Source Breakdown Voltage ID=-250µA, VGS=0V IDSS Zero Gate Voltage Drain Current VDS=-32V, VGS=0V P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Conditions STATIC PARAMETERS A: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev 0: October 2006 Alpha & Omega Semiconductor, Ltd. |
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