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IRF730 Datasheet(PDF) 2 Page - Advanced Power Electronics Corp. |
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IRF730 Datasheet(HTML) 2 Page - Advanced Power Electronics Corp. |
2 / 4 page Electrical Characteristics@Tj=25 oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=1mA 400 - - V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=3.3A - - 1 Ω VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance VDS=10V, ID=3.3A - 2.8 - S IDSS Drain-Source Leakage Current (Tj=25 oC) VDS=400V, VGS=0V - - 25 uA Drain-Source Leakage Current (Tj=125 oC) VDS=320V, VGS=0V - - 250 uA IGSS Gate-Source Leakage VGS=±20V - - ±100 nA Qg Total Gate Charge 3 ID=3.5A - 27 45 nC Qgs Gate-Source Charge VDS=320V - 4 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 15 - nC td(on) Turn-on Delay Time 3 VDD=200V - 10 - ns tr Rise Time ID=3.5A - 16 - ns td(off) Turn-off Delay Time RG=12Ω,VGS=10V - 39 - ns tf Fall Time RD=57Ω -19 - ns Ciss Input Capacitance VGS=0V - 700 1120 pF Coss Output Capacitance VDS=25V - 185 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 65 - pF Rg Gate Resistance f=1.0MHz - 1.6 2.4 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage 3 Tj=25℃, IS=5.5A, VGS=0V - - 1.5 V trr Reverse Recovery Time 3 IS=3.5A, VGS=0V, - 300 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 3.3 - uC Notes: 1.Pulse width limited by Max. junction temperature. 2.Starting Tj=25 oC , V DD=50V , L=10mH , RG=25Ω 3.Pulse test IRF730 THIS PRODUCT HAS BEEN QUALIFIED FOR USE IN CONSUMER APPLICATIONS. APPLICATIONS OR USE IN LIFE SUPPORT OR OTHER SIMILAR MISSION-CRITICAL DEVICES OR SYSTEMS ARE NOT AUTHORIZED. 2/4 THIS PRODUCT IS ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION. |
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