Advanced Power

N-CHANNEL ENHANCEMENT MODE

Electronics Corp.

POWER MOSFET

▼ Ease of Paralleling

500V

▼ Fast Switching Characteristic

0.85Ω

▼ Simple Drive Requirement

8A

Description

Absolute Maximum Ratings

Symbol

Units

Drain-Source Voltage

V

Gate-Source Voltage

V

A

A

Pulsed Drain Current

1

A

Total Power Dissipation

W

W/℃

Single Pulse Avalanche Energy

2

mJ

Avalanche Current

A

℃

Operating Junction Temperature Range

℃

Thermal Data

Symbol

Value

Unit

Rthj-c

Thermal Resistance Junction-case

Max.

1.0

℃

/W

Rthj-a

Thermal Resistance Junction-ambient

Max.

62

℃

/W

Data & specifications subject to change without notice

Parameter

Storage Temperature Range

-55 to 150

Parameter

Linear Derating Factor

IRF840

±20

Rating

500

RoHS-compliant Product

8

32

125

8

5.1

320

1

-55 to 150

200430071-1/4

G

D

S

TO-220(P)

The TO-220 and package is universally preferred for all commercial-industrial

applications. The device is suited for switch mode power supplies ,DC-AC

converters and high current high speed switching circuits.

G

D

S

APEC MOSFET provide the power designer with the best combination of fast

switching , lower on-resistance and reasonable cost.