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AO3705 Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors |
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AO3705 Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors |
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2 / 5 page  AO3705 Symbol Min Typ Max Units BVDSS -20 V -1 TJ=55°C -5 IGSS ±100 nA VGS(th) -0.5 -0.65 -1 V ID(ON) -25 A 56 70 TJ=125°C 80 100 70 90 m Ω 85 110 m Ω 100 130 m Ω gFS 15 S VSD -0.7 -1 V IS -1.2 A Ciss 560 745 pF Coss 80 pF Crss 70 pF Rg 15 23 Ω Qg 8.5 11 nC Qgs 1.2 nC Qgd 2.1 nC tD(on) 7.2 ns tr 36 ns tD(off) 53 ns tf 56 ns trr 37 49 ns Qrr 27 nC VF 0.4 0.45 V 0.1 20 CT 44 pF trr 11 14 ns Qrr 2.5 nC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. SCHOTTKY PARAMETERS Schottky Reverse Recovery Charge IF=1A, dI/dt=100A/µs Forward Voltage Drop IF=1A Junction Capacitance VR=10V Schottky Reverse Recovery Time IF=1A, dI/dt=100A/µs Drain-Source Breakdown Voltage ID=-250µA, VGS=0V Maximum reverse leakage current VR=16V Forward Transconductance VDS=-5V, ID=-3.2A Diode Forward Voltage IS=-1A,VGS=0V Gate Drain Charge Maximum Body-Diode Continuous Current IDSS mA VR=16V, TJ=125°C Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Conditions STATIC PARAMETERS Gate Threshold Voltage VDS=VGS ID=-250µA Irm µA Gate-Body leakage current VDS=0V, VGS=±8V Zero Gate Voltage Drain Current VDS=-20V, VGS=0V RDS(ON) Static Drain-Source On-Resistance VGS=-4.5V, ID=-3.2A m Ω VGS=-2.5V, ID=-2.8A VGS=-1.5V, ID=-0.5A VGS=-1.8V, ID=-2A DYNAMIC PARAMETERS Input Capacitance VGS=0V, VDS=-10V, f=1MHz Output Capacitance Reverse Transfer Capacitance Body Diode Reverse Recovery Charge IF=-3.2A, dI/dt=100A/µs Turn-On DelayTime VGS=-4.5V, VDS=-10V, RL=3Ω, RGEN=6Ω Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time VGS=-4.5V, VDS=-5V On state drain current Body Diode Reverse Recovery Time IF=-3.2A, dI/dt=100A/µs Gate resistance VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Total Gate Charge VGS=-4.5V, VDS=-10V, ID=-3.2A Gate Source Charge A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev1: May 2008 Alpha Omega Semiconductor, Ltd. www.aosmd.com |
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