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AON2701 Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors |
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AON2701 Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors |
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1 / 6 page  Symbol Units VDS V VGS V TA=25°C TA=70°C IDM VKA V TA=25°C TA=70°C IFM TA=25°C TA=70°C TJ, TSTG °C Symbol Units Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter MOSFET Schottky Drain-Source Voltage -20 Gate-Source Voltage ±8 A -2.3 Pulsed Drain Current B -15 Continuous Drain Current A ID -3 Schottky reverse voltage 20 Continuous Forward Current A IF 2.5 A 1.5 Pulsed Forward Current B 15 W 0.95 0.92 Junction and Storage Temperature Range -55 to 150 -55 to 150 Power Dissipation PD 1.5 1.45 85 Parameter: Thermal Characteristics MOSFET Typ Max 36 °C/W Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient A t ≤ 10s RθJA 35 65 45 67 Thermal Characteristics Schottky Maximum Junction-to-Ambient A t ≤ 10s RθJA °C/W Maximum Junction-to-Ambient A Steady-State 47 87 AON2701 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode Features VDS (V) = -20V ID = -3A (VGS = -4.5V) RDS(ON) < 120mΩ (VGS = -4.5V) RDS(ON) < 160mΩ (VGS = -2.5V) RDS(ON) < 200mΩ (VGS = -1.8V) SCHOTTKY VKA (V) = 20V, IF = 2A, VF<0.45V@1A General Description The AON2701/L uses advanced trench technology to provide excellent RDS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. AON2701 and AON2701L are electrically identical. -RoHS Compliant -Halogen Free* K A D S G DFN 2x2 Package Top Bottom A NC D S K G K D Alpha & Omega Semiconductor, Ltd. www.aosmd.com |
Similar Part No. - AON2701 |
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Similar Description - AON2701 |
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