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AOT474 Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors

Part # AOT474
Description  N-Channel Enhancement Mode Field Effect Transistor
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Manufacturer  AOSMD [Alpha & Omega Semiconductors]
Direct Link  http://www.aosmd.com
Logo AOSMD - Alpha & Omega Semiconductors

AOT474 Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors

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AOT474/AOTF474
N-Channel Enhancement Mode
Field Effect Transistor
General Description
Product Summary
VDS
75V
ID_TO220 (at VGS=10V)
127A
ID_TO220FL (at VGS=10V)
47A
RDS(ON) (at VGS=10V)
< 11.3m
100% UIS Tested
AOT(F)474 -RoHS Compliant
AOT(F)474L -Halogen Free
Symbol
VDS
VGS
IDM
IAR
EAR
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State
RθJC
Junction and Storage Temperature Range
-55 to 175
°C
Thermal Characteristics
Units
Maximum Junction-to-Ambient
A
°C/W
RθJA
13.9
65
13.9
Parameter
AOT474
AOTF474
V
±25
Gate-Source Voltage
Drain-Source Voltage
75
V
Units
Parameter
Absolute Maximum Ratings TA=25°C unless otherwise noted
AOT474
AOTF474
Repetitive avalanche energy L=0.1mH
C
mJ
Avalanche Current
C
Continuous Drain
Current
562
A
106
7
99
A
TA=25°C
IDSM
A
TA=70°C
ID
TC=25°C
TC=100°C
Pulsed Drain Current
C
Continuous Drain
Current
W
Power Dissipation
A
PDSM
W
TA=70°C
TA=25°C
1.9
1.9
TC=25°C
TC=100°C
The AOT(F)474/L uses a robust technology that is
designed to provide efficient and reliable power
conversion even in the most demanding applications,
including motor control. With low RDS(ON) and excellent
thermal capability this device is appropriate for high
current switching and can endure adverse operating
conditions.
AOT(F)474/AOT(F)474L are electrically Identical
Maximum Junction-to-Case
°C/W
°C/W
Maximum Junction-to-Ambient
A D
0.36
65
2.6
Power Dissipation
B
PD
127
47
89
33
200
1.2
1.2
7
417
57.5
208
29
G
D
S
TO220FL
Top View
Bottom View
G
D
S
G
D
S
TO220
Top View
Bottom View
G
G
S
D
D
S
D
AOT474
AOTF474
Rev 0: February 2009
www.aosmd.com
Page 1 of 7


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