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LTC3410B Datasheet(PDF) 3 Page - Linear Technology |
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LTC3410B Datasheet(HTML) 3 Page - Linear Technology |
3 / 16 page 3 LTC3410B 3410bfa TYPICAL PERFOR A CE CHARACTERISTICS Efficiency vs Input Voltage Efficiency vs Output Current (From Figure 1 Except for the Resistive Divider Resistor Values) INPUT VOLTAGE (V) 2.5 50 60 70 4 5 3410 G01 40 30 20 3 3.5 4.5 80 90 100 5.5 IOUT = 250mA IOUT = 10mA IOUT = 1mA VOUT = 1.2V IOUT = 100mA Reference Voltage vs Temperature TEMPERATURE ( °C) –50 0.804 0.809 0.814 25 75 3410 G03 0.799 0.794 –25 0 50 100 125 0.789 0.784 VIN = 3.6V OUTPUT CURRENT (mA) 1 40 50 60 70 80 10 100 1000 3410 G02 30 20 10 0 90 100 VOUT = 1.8V VIN = 2.7V VIN = 3.6V VIN = 4.2V SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS IS Input DC Bias Current (Note 4) Operating VFB = 0.83V or VOUT = 104%, ILOAD = 0A 200 300 µA Shutdown VRUN = 0V 0.1 1 µA fOSC Oscillator Frequency VFB = 0.8V or VOUT = 100% ● 1.8 2.25 2.7 MHz VFB = 0V or VOUT = 0V 310 kHz RPFET RDS(ON) of P-Channel FET ISW = 100mA 0.75 0.9 Ω RNFET RDS(ON) of N-Channel FET ISW = –100mA 0.55 0.7 Ω ILSW SW Leakage VRUN = 0V, VSW = 0V or 5V, VIN = 5V ±0.01 ±1 µA VRUN RUN Threshold ● 0.3 1 1.5 V IRUN RUN Leakage Current ● ±0.01 ±1 µA The ● denotes specifications which apply over the full operating temperature range, otherwise specifications are TA = 25°C. VIN = 3.6V unless otherwise specified. ELECTRICAL CHARACTERISTICS Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. Note 2: The LTC3410BE is guaranteed to meet performance specifications from 0 °C to 85°C. Specifications over the –40°C to 85°C operating temperature range are assured by design, characterization and correlation with statistical process controls. Note 3: TJ is calculated from the ambient temperature TA and power dissipation PD according to the following formula: LTC3410B: TJ = TA + (PD)(250°C/W) Note 4: Dynamic supply current is higher due to the gate charge being delivered at the switching frequency. Note 5: This IC includes overtemperature protection that is intended to protect the device during momentary overload conditions. Junction temperature will exceed 125 °C when overtemperature protection is active. Continuous operation above the specified maximum operating junction temperature may impair device reliability. |
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