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LTC3499EDD Datasheet(PDF) 3 Page - Linear Technology |
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LTC3499EDD Datasheet(HTML) 3 Page - Linear Technology |
3 / 16 page LTC3499/LTC3499B 3 3499f ELECTRICAL CHARACTERISTICS The ● denotes specifications that apply over the full operating temperature range, otherwise specifications are at TA = 25°C. VIN = 2.4V, VOUT = 5V, SHDN = 2.4V, TA = TJ unless otherwise noted. Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. Note 2: Specification is guaranteed by design and not 100% tested in production. Note 3:The LTC3499E/LTC3499BE are guaranteed to meet device specifications from 0 °C to 85°C. Specifications over the –40°C to 85°C operating temperature are assured by design, characterization and correlation with statistical process controls. Note 4: These ICs include overtemperature protection that is intended to protect the devices during momentary overload conditions. Junction temperatures will exceed 125 °C when overtemperature protection is active. Continuous operation above the specified maximum operating temperature range may impair device reliability. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS INMOS NMOS Switch Leakage VSW = 6V 0.1 5 µA IPMOS PMOS Switch Leakage VOUT = 6V, VSW = 0V 0.1 5 µA RNMOS NMOS Switch On Resistance VOUT = 3.3V 0.45 Ω VOUT = 5V 0.4 Ω RPMOS PMOS Switch On Resistance VOUT = 3.3V 0.58 Ω VOUT = 5V 0.45 Ω ILIM NMOS Current Limit ● 0.75 A tDLY, ILIM Current Limit Delay to Output Note 2 60 ns DMAX Maximum Duty Cycle ● 80 85 % DMIN Minimum Duty Cycle ● 0% fOSC Frequency Accuracy ● 1 1.2 1.4 MHz GmEA Error Amplifier Transconductance 40 µmhos ISOURCE Error Amplifier Source Current –5 µA ISINK Error Amplifier Sink Current 5 µA ISS SS Current Source VSS = 1V –3 µA VOV VOUT Overvoltage Threshold 6.8 V VOV(HYST) VOUT Overvoltage Hysteresis 400 mV Shutdown VSHDN(LOW) SHDN Input Low ● 0.2 V VSHDN(HIGH) SHDN Input High Measured at SW ● 1.2 V ISD SHDN Input Current 1 µA Reverse Battery IVOUT,REVBATT VOUT Reverse-Battery Current VOUT = 0V, VIN = VSHDN = VSW = –6V ● 5 µA IVIN,REVBATT VIN and VSW Reverse-Battery Current VOUT = 0V, VIN = VSHDN = VSW = –6V ● –5 µA ISHDN,REVBATT SHDN Reverse-Battery Current VOUT = 0V, VIN = VSHDN = VSW = –6V ● –5 µA |
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