LTC3525-3/

LTC3525-3.3/LTC3525-5

3

3525fa

Note 1: Stresses beyond those listed under Absolute Maximum Ratings

may cause permanent damage to the device. Exposure to any Absolute

Maximum Rating condition for extended periods may affect device

reliability and lifetime.

Note 2: The LTC3525E is guaranteed to meet performance specifications

from 0°C to 85°C. Specifications over the –40°C to 85°C operating

temperature range are assured by design, characterization and correlation

with statistical process controls.

Note 3: Specification is guaranteed by design and not 100% tested in

production.

(LTC3525-3.3)

ELECTRICAL CHARACTERISTICS

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNITS

Input Start-Up Voltage

0.85

1

V

Output Voltage

(Note 6)

●

3.20

3.30

3.40

V

7

15

µA

0.5

3

µA

Not Including Switch Leakage

0.1

1

µA

NMOS Switch Leakage

0.1

1

µA

PMOS Switch Leakage

0.1

3

µA

NMOS Switch On Resistance

(Note 3)

0.5

Ω

PMOS Switch On Resistance

(Note 3)

0.8

Ω

Peak Current Limit

0.4

0.45

A

⎯S⎯H⎯D⎯N Threshold

0.4

0.6

1

V

⎯S⎯H⎯D⎯N Input Current

0.01

1

µA

(LTC3525-5)

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNITS

Input Start-Up Voltage

0.85

1

V

Output Voltage

(Note 6)

●

4.85

5.00

5.15

V

8

18

µA

1.5

5

µA

Not Including Switch Leakage

0.1

1

µA

NMOS Switch Leakage

0.1

1

µA

PMOS Switch Leakage

0.1

3

µA

NMOS Switch On Resistance

(Note 3)

0.4

Ω

PMOS Switch On Resistance

(Note 3)

0.7

Ω

Peak Current Limit

0.4

0.5

A

⎯S⎯H⎯D⎯N Threshold

0.4

0.6

1

V

⎯S⎯H⎯D⎯N Input Current

0.01

1

µA

Note 4: Current Measurements are performed when the LTC3525 is not

switching.

Note 5: This IC includes overtemperature protection that is intended

to protect the device during momentary overload conditions. Junction

temperature will exceed 125°C when overtemperature protection is active.

Continuous operation above the specified maximum operating junction

temperature may impair device reliability.

Note 6: Consult LTC Marketing for other output voltage options.