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STS3414 Datasheet(PDF) 1 Page - SamHop Microelectronics Corp. |
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STS3414 Datasheet(HTML) 1 Page - SamHop Microelectronics Corp. |
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1 / 7 page  S mHop Microelectronics C orp. a STS3414 Symbol VDS VGS IDM 100 W A PD °C 1.25 -55 to 150 ID Units Parameter 30 4 °C/W V V ±12 TA=25°C Gate-Source Voltage Drain-Source Voltage THERMAL CHARACTERISTICS PRODUCT SUMMARY VDSS ID RDS(ON) (m Ω) Max 30V 4A 60 @ VGS=4.5V 50 @ VGS=10V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. SOT-23 package. ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Limit Drain Current-Continuous a -Pulsed b Maximum Power Dissipation a Operating Junction and Storage Temperature Range TJ, TSTG Thermal Resistance, Junction-to-Ambient R JA www.samhop.com.tw Jan,16,2009 1 Details are subject to change without notice. a TA=25°C N-Channel Enhancement Mode Field Effect Transistor 15 A G D S S OT -23 S G D Ver 1.1 75 @ VGS=2.5V |
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