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STU600S Datasheet(PDF) 1 Page - SamHop Microelectronics Corp.

Part # STU600S
Description  N-Channel E nhancement Mode F ield E ffect Transistor
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Manufacturer  SAMHOP [SamHop Microelectronics Corp.]
Direct Link  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STU600S Datasheet(HTML) 1 Page - SamHop Microelectronics Corp.

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N-Channel E nhancement Mode Field E ffect Transistor
TO-252 and TO-251 Package.
S amHop Microelectronics C orp.
Aug 25,2006
P R ODUC T S UMMAR Y
V DS S
ID
R DS (ON) ( m W ) Max
60V
16A
55 @ V GS = 10V
70 @ V GS = 4.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
S
G
D
S TU S E R IE S
TO-252AA(D-PAK)
S TD S E R IE S
TO-251(l-PAK)
G
G
S
S
D
D
S T U/D600S
Parameter
S ymbol
Unit
Drain-S ource Voltage
VDS
V
Gate-S ource Voltage
VGS
V
Drain Current-Continuous @ Ta
-Pulsed
ID
50
A
A
A
W
IDM
Drain-S ource Diode Forward Current
IS
Maximum Power Dissipation
PD
Operating Junction and S torage
Temperature R ange
TJ, TS TG
-55 to 175
C
a
a
a
b
60
15
20
16
30
25 C
70 C
Ta= 25 C
Ta=70 C
35
10.7
A
Limit
1
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Case
Thermal R esistance, Junction-to-Ambient
R JC
3
50
R JA
/W
C
/W
C
AB S OLUTE MAXIMUM R ATINGS
(TA=25 C unles s otherwis e noted)


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