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L9D125G80BG4I75 Datasheet(PDF) 1 Page - LOGIC Devices Incorporated |
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L9D125G80BG4I75 Datasheet(HTML) 1 Page - LOGIC Devices Incorporated |
1 / 45 page LOGIC Devices Incorporated www.logicdevices.com 1 Feb 2, 2009 LDS-L9D125G80BG4-C 2.5 Gb, DDR - SDRAM Integrated Module (IMOD) PreLIMINArY INforMAtIoN L9D125G80BG4 High Performance, Integrated Memory Module Product DDR SDRAM Data Rate = 200, 250, 266, and 333 Mbps Package: • 25mm x 25mm, Encapsulated Plastic Ball Grid array (PBGA), 219 balls, 1.27mm pitch. 2.5V ±0.2V Core Power supply 2.5V ±0.2V I/O Power supply (SSTL_2 compatible) Differential Clock inputs (CLKx, CLKx\) Commands entered on each positive CLKx edge Internal pipelined double-data- rate (DDR) Architecture; two data accesses per clock cycle Programmable Burst Length: 2, 4, or 8 Bidirectional data strobe (DQSLx, DQsHx) per byte transmitted/ received with data i.e. source-synchronous data capture FEATURES MONOLITHIC SOLUTION IMOD SOLUTION 5 X 265mm = 1328mm PLUS 5 X 66 pins = 320 pins total 625mm 219 Balls/Locations S A V I N G S O P T I O N S 53% 34% AREA I/O DQS edge-aligned with data for READ; center-aligned with data for WRITE DLL to align DQx and DQSLx, DQSHx transitions with CLKx Four internal banks for concurrent operation One data mask per byte, IMOD con- tains (10) bytes Programmable IOL/IOH Option Auto PRECHARGE option Auto REFRESH and SELF REFRESH Modes Available in INDUSTRIAL, EXTENDED and Mil-Temp ranges Organized as 16M x 72/80 Weight: LOGIC Devices, Inc. L9D125G80BG4 = 2.75 grams typical 53% SPACE savings vs. Monolithic, TSOPII-66 solution Reduced I/O routing (34%) Reduced trace length providing improved/reduced parasitic capaci- tance Impedance matched (60ohm) pack- aging High TCE organic laminate inter- poser Suitable for High Reliability applica- tions Benefits *Note: This integrated product and/or its specifications are subject to change without notice. Latest document should be retrieved from LDI prior to your design consideration. 22.3 11.9 11.9 11.9 11.9 11.9 25mm 25mm |
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