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BQ2201SNN Datasheet(PDF) 6 Page - Texas Instruments |
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BQ2201SNN Datasheet(HTML) 6 Page - Texas Instruments |
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6 / 12 page  6 TD220102.eps VCC CECON tPF tFS 4.75 VPFD 4.25 VSO tWPT VOHB CE Power-Down Timing Power-Fail Control (TA = TOPR) Symbol Parameter Minimum Typical Maximum Unit Notes tPF VCC slew, 4.75V to 4.25V 300 - - µs tFS VCC slew, 4.25V to VSO 10 - - µs tPU VCC slew, 4.25V to 4.75V 0 - - µs tCED Chip-enable propagation delay - 7 10 ns tCER Chip-enable recovery 40 80 120 ms Time during which SRAM is write-protected after VCC passes VPFD on power-up. tWPT Write-protect time 40 100 150 µs Delay after VCC slews down past VPFD before SRAM is write-protected. Note: Typical values indicate operation at TA = 25°C. Caution: Negative undershoots below the absolute maximum rating of -0.3V in battery-backup mode may affect data integrity. Oct. 1998 D bq2201 |
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