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BQ4011-200 Datasheet(PDF) 8 Page - Texas Instruments |
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BQ4011-200 Datasheet(HTML) 8 Page - Texas Instruments |
8 / 13 page bq4011/bq4011Y Power-Down/Power-Up Cycle (TA = TOPR) Symbol Parameter Minimum Typical Maximum Unit Conditions tPF VCC slew, 4.75 to 4.25 V 300 - - µs tFS VCC slew, 4.25 to VSO 10 - - µs tPU VCC slew, VSO to VPFD (max.) 0 - - µs tCER Chip enable recovery time 40 80 120 ms Time during which SRAM is write-protected after VCC passes VPFD on power-up. tDR Data-retention time in absence of VCC 10 - - years TA = 25°C. (2) tDR-N Data-retention time in absence of VCC 6- - years TA = 25°C (2); industrial temperature range (-N) only. tWPT Write-protect time 40 100 150 µs Delay after VCC slews down past VPFD before SRAM is write-protected. Notes: 1. Typical values indicate operation at TA = 25°C, VCC = 5V. 2. Battery is disconnected from circuit until after VCC is applied for the first time. tDR is the accumulated time in absence of power beginning when power is first applied to the device. Caution: Negative undershoots below the absolute maximum rating of -0.3V in battery-backup mode may affect data integrity. Power-Down/Power-Up Timing Aug. 1993 C 8 |
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