9

bq4015/Y

Symbol

Parameter

Minimum

Typical

Maximum

Unit

Conditions

300

-

-

µs

10

-

-

µs

0

-

-

µs

t

CER

Chip enable recovery time

40

80

120

ms

Time during which

SRAM is write-protected

power-up.

Data-retention time in

10

-

-

years

Write-protect time

40

100

150

µs

SRAM is write-

protected.

Notes:

1.

2.

accumulated time in absence of power beginning when power is first applied to the device.

Caution:

Negative undershoots below the absolute maximum rating of -0.3V in battery-backup mode

may affect data integrity.

Power-Down/Power-Up Timing