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2N3791 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2N3791 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification 2 Silicon PNP Power Transistors 2N3791 2N3792 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2N3791 -60 V VCEO(SUS) Collector-emitter sustaining voltage 2N3792 IC=-0.2A ;IB=0 -80 V VCE(sat) Collector-emitter saturation voltage IC=-5A; IB=-0.5A -1.0 V VBE(on)-1 Base-emitter on voltage IC=-5A ; VCE=-2V -1.8 V VBE(on)-2 Base-emitter on voltage IC=-10A ; VCE=-4V -4.0 V 2N3791 VCE=-60V; VBE(off)=-1.5V TC=150℃ -1.0 -5.0 mA ICEX Collector cut-off current 2N3792 VCE=-80V; VBE(off)=-1.5V TC=150℃ -1.0 -5.0 mA IEBO Emitter cut-off current VEB=-7V; IC=0 -5.0 mA hFE-1 DC current gain IC=-1A ; VCE=-2V 50 180 hFE-2 DC current gain IC=-3A ; VCE=-2V 30 fT Transition frequency IC=-0.5A;VCE=-10V 4 MHz |
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