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2SC1501 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC1501 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC1501 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=100μA;IE=0 300 V V(BR)CEO Collector-emitter breakdown voltage IC=1mA; IB=0 300 V V(BR)EBO Emitter-base breakdown voltage IE=100μA; IC=0 5 V VCEsat Collector-emitter saturation voltage IC=100mA IB=10m A 5.0 V VBE Base-emitter on voltage IC=50mA ; VCE=10V 1.2 V hFE-1 DC current gain IC=10mA ; VCE=10V 30 hFE-2 DC current gain IC=50mA ; VCE=10V 30 200 ICBO Collector cut-off current VCB=300V ; IE=0 100 μA COB Output capacitance IE=0; VCB=30V;f=1MHz 8 pF fT Transition frequency IE=20mA ; VCB=30V 55 MHz hFE-2 classifications P Q R S 30-60 50-100 80-150 100-200 |
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