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BD647 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BD647 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BD647 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 80 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 12mA B 2.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A; IB= 50mA B 2.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 50mA B 3.0 V VBE(on) Base-Emitter On Voltage IC= 3A ; VCE= 3V 2.5 V VCB= 80V; IE= 0 0.2 ICBO Collector Cutoff Current VCB= 50V; IE= 0; TC= 150℃ 2.0 mA ICEO Collector Cutoff Current VCE= 40V; IB= 0 B 0.5 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 5 mA hFE DC Current Gain IC= 3A ; VCE= 3V 750 isc Website:www.iscsemi.cn 2 |
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