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BD651 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # BD651
Description  isc Silicon NPN Darlington Power Transistor
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BD651 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
BD649
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-Emitter Breakdown Voltage
IC= 30mA; IB= 0
120
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 3A; IB= 12mA
B
2.0
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 5A; IB= 50mA
B
2.5
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 5A; IB= 50mA
B
3.0
V
VBE(on)
Base-Emitter On Voltage
IC= 3A ; VCE= 3V
2.5
V
VCB= 120V; IE= 0
0.2
ICBO
Collector Cutoff Current
VCB= 70V; IE= 0; TC= 150℃
2.0
mA
ICEO
Collector Cutoff Current
VCE= 60V; IB= 0
B
0.5
mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
5
mA
hFE
DC Current Gain
IC= 3A ; VCE= 3V
750
isc Website：www.iscsemi.cn
2


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