BD744 datasheet(2/2 Pages) ISC

Part #	BD744

Description	isc Silicon PNP Power Transistor

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistor

BD744

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= -30mA; IB= 0

-45

V

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= -5A; IB= -0.5A

B

-1.0

V

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC= -15A; IB= -5A

-3.0

V

VBE(on)-1

Base-Emitter On Voltage

IC= -5A ; VCE= -4V

-1.0

V

VBE(on)-2

Base-Emitter On Voltage

IC= -15A ; VCE= -4V

-3.0

V

VCB= -50V; IE= 0

-0.1

ICBO

Collector Cutoff Current

VCB= -50V; IE= 0; TC= 125℃

-5.0

mA

ICEO

Collector Cutoff Current

VCE= -30V; IB= 0

B

-0.1

mA

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

-0.5

mA

hFE-1

DC Current Gain

IC= -1A ; VCE= -4V

40

hFE-2

DC Current Gain

IC= -5A ; VCE= -4V

20

150

hFE-3

DC Current Gain

IC= -15A ; VCE= -4V

5

Switching Times

td

Delay Time

20

ns

tr

Rise Time

120

ns

ts

Storage Time

600

ns

tf

Fall time

IC= -5A; IB1= -IB2= -5A;

VBE(off)= 4.2V; RL= 6Ω;

tp= 20μs,DutyCycle≤ 2%

300

ns

isc Website：www.iscsemi.cn

2

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