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2N5599 Datasheet(PDF) 1 Page - Savantic, Inc. |
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2N5599 Datasheet(HTML) 1 Page - Savantic, Inc. |
1 / 3 page SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2N5597 2N5599 2N5601 2N5603 DESCRIPTION ·With TO-66 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For high frequency power amplifier ; audio power amplifier and drivers. PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2N5597 -80 2N5599/5601 -100 VCBO Collector-base voltage 2N5603 Open emitter -120 V 2N5597 -60 2N5599/5601 -80 VCEO Collector-emitter voltage 2N5603 Open base -100 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -2 A PD Total power dissipation TC=25 20 W Tj Junction temperature 150 Tstg Storage temperature -65~150 THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-c Thermal resistance junction to case 4.37 /W Fig.1 simplified outline (TO-66) and symbol |
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