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2SB1289 Datasheet(PDF) 2 Page - Savantic, Inc. |
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2SB1289 Datasheet(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon PNP Power Transistors 2SB1289 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-1mA; IB=0 -80 V V(BR)CBO Collector-base breakdown voltage IC=-50µA; IE=0 -80 V V(BR)EBO Emitter-base breakdown voltage IE=-50µA; IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-4A; IB=-0.4A -1.0 V VBEsat Base-emitter saturation voltage IC=-4A; IB=-0.4A -1.5 V ICBO Collector cut-off current VCB=-80V; IE=0 -10 µA IEBO Emitter cut-off current VEB=-4V; IC=0 -10 µA hFE DC current gain IC=-1A ; VCE=-5V 100 320 COB Output capacitance IE=0 ; VCB=-10V; f=1MHz 200 pF fT Transition frequency IC=-0.5A ; VCE=-5V 12 MHz hFE Classifications E F 100-200 160-320 |
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