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2N5629 Datasheet(PDF) 2 Page - Savantic, Inc. |
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2N5629 Datasheet(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors 2N5629 2N5630 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2N5629 100 VCEO(SUS) Collector-emitter sustaining voltage 2N5630 IC=0.2A ;IB=0 120 V VCEsat-1 Collector-emitter saturation voltage IC=10A; IB=1A 1.0 V VCEsat-2 Collector-emitter saturation voltage IC=16A ;IB=4A 2.0 V VBEsat Base-emitter saturation voltage IC=10A; IB=1A 1.8 V VBE Base-emitter on voltage IC=8A ; VCE=2V 1.5 V ICBO Collector cut-off current VCB=ratedVCBO; IE=0 1.0 mA 2N5629 VCE=50V; IB=0 ICEO Collector cut-off current 2N5630 VCE=60V; IB=0 1.0 mA ICEV Collector cut-off current VCE=ratedVCB; VBE(off)=1.5V TC=150 1.0 5.0 mA IEBO Emitter cut-off current VEB=7V; IC=0 1.0 mA 2N5629 25 100 hFE-1 DC current gain 2N5630 IC=8A ; VCE=2V 20 80 hFE-2 DC current gain IC=16A ; VCE=2V 4 COB Output capacitance IE=0 ; VCB=10V ;f=0.1MHz 500 pF fT Transition frequency IC=1A ; VCE=20V 1.0 MHz |
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