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2N5876 Datasheet(PDF) 1 Page - Savantic, Inc. |
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2N5876 Datasheet(HTML) 1 Page - Savantic, Inc. |
1 / 3 page SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2N5875 2N5876 DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·Complement to type 2N5877 2N5878 APPLICATIONS ·For general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2N5875 -60 VCBO Collector-base voltage 2N5876 Open emitter -80 V 2N5875 -60 VCEO Collector-emitter voltage 2N5876 Open base -80 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -10 A ICM Collector current-peak -20 A IB Base current -4 A PD Total Power Dissipation TC=25 150 W Tj Junction temperature 200 Tstg Storage temperature -65~200 THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-c Thermal resistance junction to case 1.17 /W Fig.1 simplified outline (TO-3) and symbol |
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