2N5876 datasheet(1/3 Pages) SAVANTIC

Part #	2N5876

Description	Silicon PNP Power Transistors

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Manufacturer	SAVANTIC [Savantic, Inc.]

Direct Link	http://www.svntc.com

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SavantIC Semiconductor

Product Specification

Silicon PNP Power Transistors

2N5875 2N5876

DESCRIPTION

·With TO-3 package

·Low collector saturation voltage

·Complement to type 2N5877 2N5878

APPLICATIONS

·For general-purpose power amplifier

and switching applications

PINNING

DESCRIPTION

1

Base

2

Emitter

3

Collector

Absolute maximum ratings(Ta= )

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

2N5875

-60

VCBO

Collector-base voltage

2N5876

Open emitter

-80

V

2N5875

-60

VCEO

Collector-emitter voltage

2N5876

Open base

-80

V

VEBO

Emitter-base voltage

Open collector

-5

V

IC

Collector current

-10

A

ICM

Collector current-peak

-20

A

IB

Base current

-4

A

PD

Total Power Dissipation

TC=25

150

W

Tj

Junction temperature

200

Tstg

Storage temperature

-65~200

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

Rth j-c

Thermal resistance junction to case

1.17

/W

Fig.1 simplified outline (TO-3) and symbol

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2N5876 Datasheet(PDF) 1 Page - Savantic, Inc.

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