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BUW12A Datasheet(PDF) 2 Page - Savantic, Inc. |
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BUW12A Datasheet(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors BUW12 BUW12A CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BUW12 400 VCEO(SUS) Collector-emitter sustaining voltage BUW12A IC=0.1A ; IB=0; L=25mH 450 V VCEsat Collector-emitter saturation voltage IC=6A; IB=1.2A 1.5 V VBEsat Base-emitter saturation voltage IC=6A; IB=1.2A 1.5 V BUW12 VCE=850V; VBE=0 ICES Collector cut-off current BUW12A VCE=1000V; VBE=0 1.0 mA IEBO Emitter cut-off current VEB=9V; IC=0 10 mA hFE DC current gain IC=1A ; VCE=5V 15 50 Switching times resistive load ton Turn-on time 1.0 µs ts Storage time 4.0 µs tf Fall time IC=6A ;IB1=-IB2=1.2A VCC=240V 0.8 µs |
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