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BUX85F Datasheet(PDF) 2 Page - Savantic, Inc. |
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BUX85F Datasheet(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors BUX84F BUX85F CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BUX84F 400 VCEO(SUS) Collector-emitter sustaining voltage BUX85F IC=100mA ; IB=0;L=25mH 450 V VCEsat-1 Collector-emitter saturation voltage IC=0.3A ;IB=0.03A 0.8 V VCEsat-2 Collector-emitter saturation voltage IC=1A ;IB=0.2A 1 V VBEsat Base-emitter saturation voltage IC=1A ;IB=0.2A 1.1 V BUX84F VCES=800V; VBE=0 Tj=125 0.2 1.5 ICES Collector cut-off current BUX85F VCES=1000V; VBE=0 Tj=125 0.2 1.5 mA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 mA hFE-1 DC current gain IC=0.1A ; VCE=5V 20 100 hFE-2 DC current gain IC=0.5A ; VCE=5V 15 fT Transition frequency IC=0.2A ;VCE=10V;f=1.0MHz 20 MHz Switching times ton Turn-on time 0.2 0.5 µs ts Storage time 2 3.5 µs tf Fall time IC=1A ;VCC=250V IB1=0.2A;IB2=-0.4A 0.4 µs |
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