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BD245 Datasheet(PDF) 2 Page - Savantic, Inc. |
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BD245 Datasheet(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors BD245/A/B/C CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BD245 45 BD245A 60 BD245B 80 VCEO(BR) Collector-emitter breakdown voltage BD245C IC=30mA ;IB=0 100 V VCEsat-1 Collector-emitter saturation voltage IC=3A ;IB=0.3A 1.0 V VCEsat-2 Collector-emitter saturation voltage IC=10A ;IB=2.5A 4.0 V VBE-1 Base-emitter on voltage IC=3A ; VCE=4V 1.6 V VBE-2 Base-emitter on voltage IC=10A ; VCE=4V 3.0 V BD245/245A VCE=30V; IB=0 ICEO Collector cut-off current BD245B/245C VCE=60V; IB=0 0.7 mA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 mA hFE-1 DC current gain IC=1A ; VCE=4V 40 hFE-2 DC current gain IC=3A ; VCE=4V 20 hFE-3 DC current gain IC=10A ; VCE=4V 4 Switching times ton Turn-on time 0.3 µs toff Turn-off time IC=1A; IB1=-IB2=0.1A RL=20@ 1.0 µs |
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