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2SA1006A Datasheet(PDF) 2 Page - Savantic, Inc. |
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2SA1006A Datasheet(HTML) 2 Page - Savantic, Inc. |
2 / 5 page SavantIC Semiconductor Product Specification 2 Silicon PNP Power Transistors 2SA1006 2SA1006A 2SA1006B CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=-0.5A; IB=-50mA -1.0 V VBEsat Base-emitter saturation voltage IC=-0.5A ;IB=-50mA -1.5 V ICBO Collector cut-off current VCB=-150V ;IE=0 -1 µA IEBO Emitter cut-off current VEB=-3V; IC=0 -1 µA hFE-1 DC current gain IC=-5mA ; VCE=-5V 30 hFE-2 DC current gain IC=-150mA ; VCE=-5V 60 320 Cob Output capacitance IE=0 ; VCB=-10V,f=1MHz 45 pF fT Transition frequency IC=-100mA ; VCE=10V 80 MHz hFE-2 Classifications R Q P 60-120 100-200 160-320 |
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