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MJE1320 Datasheet(PDF) 2 Page - Savantic, Inc. |
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MJE1320 Datasheet(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors MJE1320 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=50mA; IB=0. 700 V VCEsat-1 Collector-emitter saturation voltage IC=1A ;IB=0.5A TC=100 0.18 0.3 1.0 1.5 V VCEsat-2 Collector-emitter saturation voltage IC=2A ;IB=1A 0.3 2.5 V VBEsat-1 Base-emitter saturation voltage IC=1A ;IB=0.5A TC=100 0.2 0.15 1.5 1.5 V VBEsat-2 Base-emitter saturation voltage IC=2A ;IB=1A 0.9 2.8 V ICEV Collector cut-off current VCEV=RatedValue;VBE(off)=1.5V TC=100 0.25 2.5 mA IEBO Emitter cut-off current VEB=9V; IC=0 0.25 mA hFE-1 DC current gain IC=2A ; VCE=5V 2.5 hFE-2 DC current gain IC=1A ; VCE=5V 3 COB Collector outoput capacitance IE=0 ; VCB=10V;f=1.0MHz 80 pF Switching times resistive load,Duty CycleA2%,tp=25µs td Delay time 0.1 µs tr Rise time 0.8 µs ts Storage time 4.0 µs tf Fall time VCC=250V; IC=1A IB1=IB2=0.5A 0.8 µs |
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