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MJE13003 Datasheet(PDF) 1 Page - Savantic, Inc. |
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MJE13003 Datasheet(HTML) 1 Page - Savantic, Inc. |
1 / 5 page SavantIC Semiconductor Product Specification Silicon NPN Power Transistors MJE13003 DESCRIPTION ·With TO-126 package ·High voltage ,high speed APPLICATIONS ·Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter ABSOLUTE MAXIMUM RATINGS (TC=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 700 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 9 V IC Collector current (DC) 1.5 A ICM Collector current-Peak 3 A IB Base current 0.75 A IBM Base current-Peak 1.5 A IE Emitter current 2.25 A IEM Emitter current-Peak 4.5 A Ta=25 1.4 PD Total power dissipation TC=25 40 W Tj Junction temperature 150 Tstg Storage temperature -65~150 THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-C Thermal resistance from junction to case 3.12 /W |
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