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MJE13009 Datasheet(PDF) 2 Page - Savantic, Inc. |
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MJE13009 Datasheet(HTML) 2 Page - Savantic, Inc. |
2 / 5 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors MJE13009 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=10mA; IB=0 400 V VCEsat-1 Collector-emitter saturation voltage IC=5A; IB=1A 1.0 V VCEsat-2 Collector-emitter saturation voltage IC=8A ;IB=1.6A TC=100 1.5 2.0 V VCEsat-3 Collector-emitter saturation voltage IC=12A; IB=3A 3.0 V VBEsat-1 Base-emitter saturation voltage IC=5A; IB=1A 1.2 V VBEsat-2 Base-emitter saturation voltage IC=8A; IB=1.6A TC=100 1.6 1.5 V ICEV Collector cut-off current VCEV=Rated value, VBE(off)=1.5V dc;TC=100 1.0 5.0 mA IEBO Emitter cut-off current VEB=9V; IC=0 1.0 mA hFE-1 DC current gain IC=5A ; VCE=5V 8 40 hFE-2 DC current gain IC=8A ; VCE=5V 6 30 fT Transition frequency IC=0.5A ; VCE=10V;f=1MHz 4 MHz COB Collector outoput capacitance IE=0; f=0.1MHz ; VCB=10V 180 pF Switching times resistive load td Delay time 0.06 0.1 µs tr Rise time 0.45 1.0 µs ts Storage time 1.30 3.0 µs tf Fall time VCC=125V ,IC=8A IB1=-IB2=1.6A tp=25µs duty cycleD1% 0.20 0.7 µs |
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