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2SC5417 Datasheet(PDF) 2 Page - Savantic, Inc. |
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2SC5417 Datasheet(HTML) 2 Page - Savantic, Inc. |
2 / 4 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC5417 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0 600 V VCEsat Collector-emitter saturation voltage IC=1.5A; IB=0.3 A 1.0 V VBEsat Base-emitter saturation voltage IC=1.5A; IB=0.3 A 1.5 V ICBO Collector cut-off current VCB=600V; IE=0 10 µA ICES Collector cut-off current VCE=1200V; RBE=0 1.0 mA IEBO Emitter cut-off current VEB=9V; IC=0 1.0 mA hFE-1 DC current gain IC=0.1A ; VCE=5V 30 50 hFE-2 DC current gain IC=1.0A ; VCE=5V 10 Switching times ts Storage time 2.5 µs tf Fall time IC=1.5A;IB1=0.3A ;IB2=-0.6A 0.15 µs |
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